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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4466DY specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C15A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs7.5mOhm @ 15A, 4.5V
Gate charge (Qg) (Max) @ vgs66 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds4700 pF @ 10 V