Fairchild Semiconductor SI4463DY
MPNSI4463DY
Active
P-CHANNEL MOSFET
$0.7100Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | PowerTrench® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 11.5A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1.5V @ 250µA |
| Rds on (Max) @ id, vgs | 12mOhm @ 11.5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 4481 pF @ 10 V |