SI4425DY

Fairchild Semiconductor

Fairchild Semiconductor SI4425DY
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MOQ 5 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI4425DY specifications
Parameter / AttributeSpecification / Value
SeriesPowerTrench™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C11A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs14mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds3000 pF @ 15 V
SI4425DY
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