Fairchild Semiconductor FQB12N60TM
MPNFQB12N60TM
Active
N-CHANNEL POWER MOSFET
$1.2800Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSRoHS non-compliant
SeriesQFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | QFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10.5A (Tc) |
| Power dissipation | 3.13W (Ta), 180W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 700mOhm @ 5.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 54 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1900 pF @ 25 V |