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Fairchild Semiconductor FQAF27N25 — Discrete Semiconductors

Fairchild Semiconductor FQAF27N25

MPNFQAF27N25
Active

N-CHANNEL POWER MOSFET

$1.2500Ref. price · indicative, final on quote
PackagingTO-3P-3 Full Pack
RoHSRoHS non-compliant
SeriesQFET®
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQAF27N25 specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C19A (Tc)
Power dissipation95W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs110mOhm @ 9.5A, 10V
Gate charge (Qg) (Max) @ vgs65 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2450 pF @ 25 V