Skip to main content
Fairchild Semiconductor FDD6680 — Discrete Semiconductors

Fairchild Semiconductor FDD6680

MPNFDD6680
Obsolete
$1.5300Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD6680 specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12A (Ta), 46A (Tc)
Power dissipation3.3W (Ta), 56W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1230 pF @ 15 V