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Fairchild Semiconductor FDD6676S — Discrete Semiconductors

Fairchild Semiconductor FDD6676S

MPNFDD6676S
Active

N-CHANNEL POWER MOSFET

$0.6700Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD6676S specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C78A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs6mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs58 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds4770 pF @ 15 V