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DMP45H4D9HJ3

Diodes Incorporated DMP45H4D9HJ3

MPNDMP45H4D9HJ3
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$1.21 / ea

7 in stock — maximum per order · 3–4 days lead time

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

DMP45H4D9HJ3 specifications
ParameterValue
FET typeP-Channel
MountingThrough Hole
Drain to source voltage450 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.6A (Tc)
Power dissipation104W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs4.9Ohm @ 1.05A, 10V
Gate charge (Qg) (Max) @ vgs13.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds547 pF @ 25 V