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Diodes Incorporated DMP10H4D2S-13 — Discrete Semiconductors

Diodes Incorporated DMP10H4D2S-13

MPNDMP10H4D2S-13
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MOSFET P-CH 100V 270MA SOT23-3

$0.4000Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMP10H4D2S-13 Technical Specifications
ParameterValue
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C270mA (Ta)
Power dissipation380mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs4.2Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs1.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds87 pF @ 25 V