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Diodes Incorporated DMNH4006SPSQ-13 — Discrete Semiconductors

Diodes Incorporated DMNH4006SPSQ-13

MPNDMNH4006SPSQ-13
Active

MOSFET N-CH 40V 110A PWRDI5060-8

$1.4600Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMNH4006SPSQ-13 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation1.6W (Ta)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs50.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2280 pF @ 25 V