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Diodes Incorporated DMNH10H028SCT — Discrete Semiconductors

Diodes Incorporated DMNH10H028SCT

MPNDMNH10H028SCT
Active

MOSFET N-CH 100V 60A TO220AB

$1.5300Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMNH10H028SCT Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation2.8W (Ta)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs28mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs31.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1942 pF @ 50 V