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Diodes Incorporated DMN65D8LV-13 — Discrete Semiconductors

Diodes Incorporated DMN65D8LV-13

MPNDMN65D8LV-13
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$0.07 / ea · total $0.35

57 in stock — maximum per order · MOQ 5 · 3–4 days lead time

$0.07 / ea from 50 pcs

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

DMN65D8LV-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C310mA (Ta)
Power dissipation370mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs3Ohm @ 115mA, 10V
Gate charge (Qg) (Max) @ vgs0.87 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds22 pF @ 25 V