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Diodes Incorporated DMN65D8LDW-7 — Discrete Semiconductors

Diodes Incorporated DMN65D8LDW-7

MPNDMN65D8LDW-7
Active

MOSFET 2N-CH 60V 0.18A SOT363

$0.3600Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN65D8LDW-7 Technical Specifications
ParameterValue
Mounting typeSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C180mA
Power - max300mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs6Ohm @ 115mA, 10V
Gate charge (Qg) (Max) @ vgs0.87nC @ 10V
Input capacitance (Ciss) (Max) @ vds22pF @ 25V