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Diodes Incorporated DMN61D9UT-7 — Discrete Semiconductors

Diodes Incorporated DMN61D9UT-7

MPNDMN61D9UT-7
Obsolete
$0.06720Price · pay online now
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$0.07 / ea · total $0.70

40 in stock — maximum per order · MOQ 10 · 3–4 days lead time

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

DMN61D9UT-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)1.8V, 5V
Current - continuous drain (Id) @ 25°C350mA (Ta)
Power dissipation260mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-523
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs2Ohm @ 50mA, 5V
Gate charge (Qg) (Max) @ vgs0.4 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds28.5 pF @ 30 V