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Diodes Incorporated DMN61D8LVTQ-7 — Discrete Semiconductors

Diodes Incorporated DMN61D8LVTQ-7

MPNDMN61D8LVTQ-7
Active

MOSFET 2N-CH 60V 0.63A TSOT26

$0.5000Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN61D8LVTQ-7 Technical Specifications
ParameterValue
Mounting typeSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C630mA
Power - max820mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs1.8Ohm @ 150mA, 5V
Gate charge (Qg) (Max) @ vgs0.74nC @ 5V
Input capacitance (Ciss) (Max) @ vds12.9pF @ 12V