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Diodes Incorporated DMN39M1LK3-13 — Discrete Semiconductors

Diodes Incorporated DMN39M1LK3-13

MPNDMN39M1LK3-13
Active

MOSFET BVDSS: 25V~30V TO252 T&R

$0.6300Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN39M1LK3-13 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C17.9A (Ta), 89.3A (Tc)
Power dissipation1.4W (Ta), 65.7W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs5.5mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs38.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2253 pF @ 15 V