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Diodes Incorporated DMN3900UFA-7B — Discrete Semiconductors

Diodes Incorporated DMN3900UFA-7B

MPNDMN3900UFA-7B
Active

MOSFET N-CH 30V 550MA 3DFN

$0.4000Ref. price · indicative, final on quote
Packaging3-XFDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3900UFA-7B specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C550mA (Ta)
Power dissipation390mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs760mOhm @ 200mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.7 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds42.2 pF @ 25 V