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Diodes Incorporated DMN33D8LVQ-13 — Discrete Semiconductors

Diodes Incorporated DMN33D8LVQ-13

MPNDMN33D8LVQ-13
Active

MOSFET 2N-CH 30V 0.35A SOT563

$0.4600Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN33D8LVQ-13 Technical Specifications
ParameterValue
Mounting typeSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C350mA (Ta)
Power - max430mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1.5V @ 100µA
Rds on (Max) @ id, vgs2.4Ohm @ 250mA, 10V
Gate charge (Qg) (Max) @ vgs1.23nC @ 10V
Input capacitance (Ciss) (Max) @ vds48pF @ 5V