Diodes Incorporated DMN33D8LVQ-13
MPNDMN33D8LVQ-13
Active
MOSFET 2N-CH 30V 0.35A SOT563
$0.4600Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 350mA (Ta) |
| Power - max | 430mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Qualification | AEC-Q101 |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 1.5V @ 100µA |
| Rds on (Max) @ id, vgs | 2.4Ohm @ 250mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 1.23nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 48pF @ 5V |