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Diodes Incorporated DMN33D8LT-7 — Discrete Semiconductors

Diodes Incorporated DMN33D8LT-7

MPNDMN33D8LT-7
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MOSFET N-CH 30V 115MA SOT523

$0.3600Ref. price · indicative, final on quote
PackagingSOT-523
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN33D8LT-7 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4V
Current - continuous drain (Id) @ 25°C115mA (Ta)
Power dissipation240mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-523
Vgs(th) (Max) @ id1.5V @ 100µA
Rds on (Max) @ id, vgs5Ohm @ 10mA, 4V
Gate charge (Qg) (Max) @ vgs0.55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds48 pF @ 5 V