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Diodes Incorporated DMN30H4D0LFDE-7 — Discrete Semiconductors

Diodes Incorporated DMN30H4D0LFDE-7

MPNDMN30H4D0LFDE-7
Active

MOSFET N-CH 300V 550MA 6UDFN

$0.5300Ref. price · indicative, final on quote
Packaging6-PowerUDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN30H4D0LFDE-7 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)2.7V, 10V
Current - continuous drain (Id) @ 25°C550mA (Ta)
Power dissipation630mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case6-PowerUDFN
Vgs(th) (Max) @ id2.8V @ 250µA
Rds on (Max) @ id, vgs4Ohm @ 300mA, 10V
Gate charge (Qg) (Max) @ vgs7.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds187.3 pF @ 25 V