DMN3035LWN-7

Diodes Incorporated

MOSFET 2N-CH 30V 5.5A 8VDFN

Diodes Incorporated DMN3035LWN-7
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN3035LWN-7 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C5.5A
Power - max770mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
Case8-PowerVDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 4.8A, 10V
Gate charge (Qg) (Max) @ vgs9.9nC @ 10V
Input capacitance (Ciss) (Max) @ vds399pF @ 15V
DMN3035LWN-7
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