DMN3032LFDBQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 6.2A U-DFN2020

Diodes Incorporated DMN3032LFDBQ-7
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[IN STOCK] In Stock: 3 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN3032LFDBQ-7 specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6.2A
Power - max1W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs30mOhm @ 5.8A, 10V
Gate charge (Qg) (Max) @ vgs10.6nC @ 10V
Input capacitance (Ciss) (Max) @ vds500pF @ 15V
DMN3032LFDBQ-7
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