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Diodes Incorporated DMN3030LFG-7 — Discrete Semiconductors

Diodes Incorporated DMN3030LFG-7

MPNDMN3030LFG-7
Obsolete
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2 in stock — maximum per order · 3–4 days lead time

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

DMN3030LFG-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.3A (Ta)
Power dissipation900mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs18mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs17.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds751 pF @ 10 V