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Diodes Incorporated DMN3028LQ-7 — Discrete Semiconductors

Diodes Incorporated DMN3028LQ-7

MPNDMN3028LQ-7
Active

MOSFET BVDSS: 25V~30V,SOT23,T&R,

$0.4700Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN3028LQ-7 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C6.2A (Ta)
Power dissipation860mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs25mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs10.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds680 pF @ 15 V