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Diodes Incorporated DMN3020UTS-13 — Discrete Semiconductors

Diodes Incorporated DMN3020UTS-13

MPNDMN3020UTS-13
Active

MOSFET N-CH 30V 15A 8TSSOP

$0.5600Ref. price · indicative, final on quote
Packaging8-TSSOP (0.173", 4.40mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3020UTS-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation1.4W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-TSSOP (0.173\", 4.40mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 4.5A, 4.5V
Gate charge (Qg) (Max) @ vgs27 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds1304 pF @ 15 V