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Diodes Incorporated DMN3020UTS-13 — Discrete Semiconductors

Diodes Incorporated DMN3020UTS-13

MPNDMN3020UTS-13
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MOSFET N-CH 30V 15A 8TSSOP

$0.5600Ref. price · indicative, final on quote
Packaging8-TSSOP (0.173", 4.40mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN3020UTS-13 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation1.4W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-TSSOP (0.173\", 4.40mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 4.5A, 4.5V
Gate charge (Qg) (Max) @ vgs27 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds1304 pF @ 15 V