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Diodes Incorporated DMN3008SFGQ-7 — Discrete Semiconductors

Diodes Incorporated DMN3008SFGQ-7

MPNDMN3008SFGQ-7
Active

MOSFET N-CH 30V PWRDI3333

$0.3401Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3008SFGQ-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C17.6A (Ta), 62A (Tc)
Power dissipation900mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerVDFN
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs4.4mOhm @ 13.5A, 10V
Gate charge (Qg) (Max) @ vgs86 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3690 pF @ 10 V