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Diodes Incorporated DMN3008SFGQ-7 — Discrete Semiconductors

Diodes Incorporated DMN3008SFGQ-7

MPNDMN3008SFGQ-7
Active

MOSFET N-CH 30V PWRDI3333

$0.3401Ref. price · indicative, final on quote
Packaging8-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN3008SFGQ-7 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C17.6A (Ta), 62A (Tc)
Power dissipation900mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerVDFN
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs4.4mOhm @ 13.5A, 10V
Gate charge (Qg) (Max) @ vgs86 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3690 pF @ 10 V