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Diodes Incorporated DMN2080UCB4-7 — Discrete Semiconductors

Diodes Incorporated DMN2080UCB4-7

MPNDMN2080UCB4-7
Active

MOSFET N-CH 20V 3A X2-WLB0606-4

$0.4600Ref. price · indicative, final on quote
Packaging4-XFBGA, WLBGA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN2080UCB4-7 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C3A (Ta)
Power dissipation710mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case4-XFBGA, WLBGA
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs56mOhm @ 1A, 4.5V
Gate charge (Qg) (Max) @ vgs7.4 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds540 pF @ 10 V