Diodes Incorporated DMN2022UNS-7
MPNDMN2022UNS-7
Active
MOSFET 2N-CH 20V 10.7A PWRDI3333
$0.6000Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 10.7A (Ta) |
| Power - max | 1.2W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 10.8mOhm @ 4A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 20.3nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 1870pF @ 10V |