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Diodes Incorporated DMN2022UNS-7 — Discrete Semiconductors

Diodes Incorporated DMN2022UNS-7

MPNDMN2022UNS-7
Active

MOSFET 2N-CH 20V 10.7A PWRDI3333

$0.6000Ref. price · indicative, final on quote
Packaging8-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN2022UNS-7 Technical Specifications
ParameterValue
Mounting typeSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C10.7A (Ta)
Power - max1.2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Common Drain
Case8-PowerVDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs10.8mOhm @ 4A, 4.5V
Gate charge (Qg) (Max) @ vgs20.3nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds1870pF @ 10V