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Diodes Incorporated DMN2016UTS-13 — Discrete Semiconductors

Diodes Incorporated DMN2016UTS-13

MPNDMN2016UTS-13
Active

MOSFET 2N-CH 20V 8.58A 8TSSOP

$0.6000Ref. price · indicative, final on quote
Packaging8-TSSOP (0.173", 4.40mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN2016UTS-13 Technical Specifications
ParameterValue
Mounting typeSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C8.58A
Power - max880mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual) Common Drain
Case8-TSSOP (0.173\", 4.40mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs14.5mOhm @ 9.4A, 4.5V
Gate charge (Qg) (Max) @ vgs16.5nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds1495pF @ 10V