DMN2016UTS-13
Diodes Incorporated
MOSFET 2N-CH 20V 8.58A 8TSSOP
[IN STOCK] In Stock: 772 pcs
MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 8.58A |
| Power - max | 880mW |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Case | 8-TSSOP (0.173\", 4.40mm Width) |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 14.5mOhm @ 9.4A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 16.5nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 1495pF @ 10V |
DMN2016UTS-13
[ALLOC] verified