DMN2011UTS-13

Diodes Incorporated

MOSFET N-CH 20V 21A 8TSSOP

Diodes Incorporated DMN2011UTS-13
Download datasheet (PDF)
[IN STOCK] In Stock: 70 pcs
$1.50/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN2011UTS-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-TSSOP (0.173\", 4.40mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs11mOhm @ 7A, 4.5V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2248 pF @ 10 V
DMN2011UTS-13
[ALLOC] verified
Quote