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Diodes Incorporated DMN2011UTS-13 — Discrete Semiconductors

Diodes Incorporated DMN2011UTS-13

MPNDMN2011UTS-13
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MOSFET N-CH 20V 21A 8TSSOP

$0.5600Ref. price · indicative, final on quote
Packaging8-TSSOP (0.173", 4.40mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN2011UTS-13 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-TSSOP (0.173\", 4.40mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs11mOhm @ 7A, 4.5V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2248 pF @ 10 V