Diodes Incorporated DMN2011UFX-7
MPNDMN2011UFX-7
Active
MOSFET 2N-CH 20V 12.2A DFN2050-4
$0.8300Ref. price · indicative, final on quote
Packaging4-VFDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 12.2A (Ta) |
| Power - max | 2.1W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Case | 4-VFDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 9.5mOhm @ 10A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 56nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 2248pF @ 10V |