Skip to main content
Diodes Incorporated DMN2011UFX-7 — Discrete Semiconductors

Diodes Incorporated DMN2011UFX-7

MPNDMN2011UFX-7
Active

MOSFET 2N-CH 20V 12.2A DFN2050-4

$0.8300Ref. price · indicative, final on quote
Packaging4-VFDFN Exposed Pad
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN2011UFX-7 Technical Specifications
ParameterValue
Mounting typeSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C12.2A (Ta)
Power - max2.1W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Common Drain
Case4-VFDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs9.5mOhm @ 10A, 4.5V
Gate charge (Qg) (Max) @ vgs56nC @ 10V
Input capacitance (Ciss) (Max) @ vds2248pF @ 10V