Diodes Incorporated DMN10H220LFDF-7
MPNDMN10H220LFDF-7
Active
MOSFET BVDSS: 61V~100V U-DFN2020
$0.4600Ref. price · indicative, final on quote
Packaging6-UDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 2.2A (Ta) |
| Power dissipation | 1.1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-UDFN Exposed Pad |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 225mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 384 pF @ 25 V |