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Diodes Incorporated DMN10H170SVT-7 — Discrete Semiconductors

Diodes Incorporated DMN10H170SVT-7

MPNDMN10H170SVT-7
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MOSFET N-CH 100V 2.6A TSOT26

$0.5100Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN10H170SVT-7 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C2.6A (Ta)
Power dissipation1.2W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs9.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1167 pF @ 25 V