Skip to main content
Diodes Incorporated DMN1019USN-13 — Discrete Semiconductors

Diodes Incorporated DMN1019USN-13

MPNDMN1019USN-13
Active

MOSFET N-CH 12V 9.3A SC59

$0.4500Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN1019USN-13 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.2V, 2.5V
Current - continuous drain (Id) @ 25°C9.3A (Ta)
Power dissipation680mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id800mV @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 9.7A, 4.5V
Gate charge (Qg) (Max) @ vgs50.6 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds2426 pF @ 10 V