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Diodes Incorporated DMN1019UFDE-7 — Discrete Semiconductors

DMN1019UFDE-7 N-Ch MOSFET 12V 11A U-DFN2020-6 — Diodes Inc | ...

MPNDMN1019UFDE-7
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MOSFET N CH 12V 11A U-DFN2020-6E

$0.4700Ref. price · indicative, final on quote
Packaging6-PowerUDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN1019UFDE-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C11A (Ta)
Power dissipation690mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case6-PowerUDFN
Vgs(th) (Max) @ id800mV @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 9.7A, 4.5V
Gate charge (Qg) (Max) @ vgs50.6 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds2425 pF @ 10 V