Diodes Incorporated DMN1008UFDF-13
MPNDMN1008UFDF-13
Active
MOSFET N-CH 12V 12.2A 6UDFN
$0.4800Ref. price · indicative, final on quote
Packaging6-UDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 12 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 12.2A (Ta) |
| Power dissipation | 700mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 6-UDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 8mOhm @ 5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 23.4 nC @ 8 V |
| Input capacitance (Ciss) (Max) @ vds | 995 pF @ 6 V |