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Diodes Incorporated DMN1008UFDF-13 — Discrete Semiconductors

Diodes Incorporated DMN1008UFDF-13

MPNDMN1008UFDF-13
Active

MOSFET N-CH 12V 12.2A 6UDFN

$0.4800Ref. price · indicative, final on quote
Packaging6-UDFN Exposed Pad
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN1008UFDF-13 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C12.2A (Ta)
Power dissipation700mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 5A, 4.5V
Gate charge (Qg) (Max) @ vgs23.4 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds995 pF @ 6 V