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Comchip Technology 2N3906-G — Discrete Semiconductors

Comchip Technology 2N3906-G

MPN2N3906-G
Active
$0.3300Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

2N3906-G Technical Specifications
ParameterValue
Mounting typeThrough Hole
Transistor typePNP
Voltage - collector emitter breakdown40 V
Current - collector (Ic)200 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 100mA, 1V
Frequency250MHz
Operating temperature-55°C ~ 150°C (TJ)
PackageBag
CaseTO-226-3, TO-92-3 (TO-226AA)
Vce saturation (Max) @ ib, ic400mV @ 5mA, 50mA