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Comchip Technology 2N3906-G — Discrete Semiconductors

Comchip Technology 2N3906-G

MPN2N3906-G
Active
$0.3300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2N3906-G specifications
ParameterValue
MountingThrough Hole
FET typePNP
Voltage - collector emitter breakdown40 V
Current - collector (Ic)200 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 100mA, 1V
Frequency250MHz
Operating temperature-55°C ~ 150°C (TJ)
PackageBag
CaseTO-226-3, TO-92-3 (TO-226AA)
Vce saturation (Max) @ ib, ic400mV @ 5mA, 50mA