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Bourns Inc. TIP32B-S — Discrete Semiconductors

Bourns Inc. TIP32B-S

MPNTIP32B-S
Obsolete
$0.9300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TIP32B-S specifications
ParameterValue
MountingThrough Hole
FET typePNP
Voltage - collector emitter breakdown80 V
Current - collector (Ic)3 A
Current - collector cutoff300µA
DC current gain (hFE) (Min) @ ic, vce10 @ 3A, 4V
Power - max40 W
Operating temperature-65°C ~ 150°C (TJ)
PackageTube
CaseTO-220-3
Vce saturation (Max) @ ib, ic1.2V @ 375mA, 3A