Bourns Inc. BSDD06G65E2
MPNBSDD06G65E2
Active
DIODE SIC 650V 6A TO252
$2.23Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 6 A |
| Current - reverse leakage @ vr | 30 µA @ 650 V |
| Current - average rectified | 6A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | SiC (Silicon Carbide) Schottky |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Capacitance @ vr, | 201pF @ 1V, 1MHz |