Analog Devices LT10 Memory Series

3 variants · Analog DevicesAll Memory (DRAM / SRAM / Flash / EEPROM) →

About the Analog Devices LT10 Memory Series

The Analog Devices LT10 Memory Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common mounting of Through Hole and package of Tube. Variants differ by amplifier type, case and current - input bias, so you can match the exact amplifier type your application requires using the selection guide below. All listed Analog Devices LT10 Memory Series part numbers are active and orderable.

Select a variant by

Amplifier type: Buffer · General Purpose · J-FET
Case: 8-DIP (0.300\", 7.62mm) · TO-220-5
Current - input bias: 7 pA · 500 pA · 500 µA
Gain bandwidth product: 5 MHz · 20 MHz · 800 kHz
Number of circuits: 1 · 2
Operating temperature: 0°C ~ 70°C · 0°C ~ 100°C · 0°C ~ 125°C
Slew rate: 0.25V/µs · 13V/µs · 75V/µs
Voltage - supply span: 36 V · 40 V

Shared specifications

Mounting: Through Hole
Package: Tube

Variant comparison

Parameter	LT1001ACN8#PBF	LT1057CN8#PBF	LT1010CT#06PBF
Amplifier type	General Purpose	J-FET	Buffer
Case	8-DIP (0.300\", 7.62mm)	8-DIP (0.300\", 7.62mm)	TO-220-5
Current - input bias	500 pA	7 pA	500 µA
Gain bandwidth product	800 kHz	5 MHz	20 MHz
Number of circuits	1	2	1
Operating temperature	0°C ~ 125°C	0°C ~ 70°C	0°C ~ 100°C
Slew rate	0.25V/µs	13V/µs	75V/µs
Voltage - supply span	36 V	36 V	40 V

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