Dual low-side MOSFET driver — 1.5 A peak, 20 ns edges
The TelCom Semiconductor TSC427EPA is a dual low-side MOSFET driver for N-channel and P-channel power MOSFETs. Each of the two independent, non-inverting channels delivers 1.5 A peak source and 1.5 A peak sink current, with typical rise and fall times of 20 ns. The supply range spans 4.5 V to 18 V. Logic inputs are compatible with standard CMOS and TTL levels — VIL at 0.8 V, VIH at 2.4 V.
Where it fits — switching loads and gate-drive circuits
This driver is sized for applications that need to switch a pair of low-side MOSFETs at moderate frequency: DC-DC converters, motor-drive half-bridges, solenoid drivers, and class-D audio output stages. The 1.5 A peak output can charge and discharge the gate capacitance of a medium-power MOSFET in tens of nanoseconds, keeping switching losses in check. The through-hole package (0.300" width, 7.62 mm pitch) is a standard footprint for prototyping, legacy board rework, and designs where through-hole assembly is preferred over surface-mount.
Active lifecycle — no obsolescence risk for new builds
The TSC427EPA carries an active product status. For a BOM line that needs a dual low-side driver in an 8-pin DIP, this part is a straightforward fit for both new designs and ongoing production — no supply-chain clock ticking.
RoHS note — verify compliance requirements
This part is listed as RoHS non-compliant. If your assembly process or end-market requires RoHS exemption or full compliance, confirm the solder-joint and material restrictions before committing the BOM.