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Analog Devices TSC427CPA

TSC427CPA Dual Power MOSFET Driver, Active

MPNTSC427CPA
End of Life

TelCom TSC427CPA dual power MOSFET driver, active production, RoHS non-compliant, Bulk package.

$1.78Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

TSC427CPA Technical Specifications
ParameterValue
Series*
PackageBulk

Product details

Dual power MOSFET driver — what it is and where it fits

The TelCom TSC427CPA is a dual power MOSFET driver designed to drive the gate of a power MOSFET from a logic-level input. It takes a low-current digital signal and delivers the peak current needed to charge and discharge the gate capacitance quickly, reducing switching losses in the power stage. Typical applications include switch-mode power supplies, motor drives, and DC-DC converters where two independent MOSFETs need to be driven, such as a half-bridge or synchronous rectifier.

RoHS status — what it means for your BOM

The TSC427CPA is RoHS non-compliant. If your assembly line or end-product requires RoHS compliance, this part will not pass incoming inspection. It is a fit for legacy designs, repair stock, or projects with a RoHS exemption. For new RoHS-mandated builds, a compliant alternative in the same functional family would be needed.

Sourcing and lifecycle

The TSC427CPA is listed as Active in production. There is no evidence of a last-time-buy or discontinuation notice. The part is RoHS non-compliant, so it may not be stocked by all distributors.

Frequently asked questions

Can the TSC427CPA drive both high-side and low-side MOSFETs?

As a dual power MOSFET driver, the TSC427CPA has two independent driver channels. Each channel can drive a MOSFET gate, so it can be used to drive a high-side and low-side MOSFET in a half-bridge configuration, provided the supply voltage and drive current meet the MOSFET requirements.