4A peak drive, 40ns rise — switching loss floor
The MAX17601ASA+ delivers 4A peak source and 4A peak sink current to the gate of an N-channel MOSFET. That current charges the gate capacitance in 40ns (rise) and discharges it in 25ns (fall) — fast enough to keep the MOSFET in the linear region for only a few nanoseconds per cycle, which directly sets the switching loss floor. Two independent low-side channels in one 8-SOIC package drive two separate MOSFETs with independent inputs. The driven configuration is low-side — the source of each external MOSFET connects to ground, so no bootstrap capacitor or floating supply is needed.
Supply range and logic compatibility
Supply voltage spans 4V to 14V, covering both 5V and 12V bias rails common in industrial control, telecom bricks, and automotive power stages. Operating junction temperature range is -40°C to 150°C. That covers under-hood automotive ambient and high-ambient industrial enclosures where the driver sits near hot power semiconductors.
Active lifecycle, ROHS3, standard footprint
ROHS3 compliant, so no exemption conflicts for EU or California markets. Package is 8-SOIC (0.154", 3.90mm width), a standard surface-mount footprint. The tube delivery is typical for engineering samples and low-volume production; reel options may be available through the supply chain.