Matched quad NPN array for precision analog
The MAT04AY from Analog Devices integrates four NPN transistors on a single monolithic die, laser-trimmed for tight matching of Vbe and hFE across the array. Each transistor is rated for a collector current up to 30 mA and a collector-emitter breakdown of 40 V, with a transition frequency of 300 MHz — enough bandwidth for fast switching regulators, video amplifiers, or RF front-end biasing.
Hermetic package and temperature grade
Housed in a 14-lead CERDIP (0.300-inch body width), the MAT04AY is a through-hole part with a hermetic ceramic seal. The operating temperature range extends to 85 °C, which covers most industrial and telecom environments but stops short of the full military -55 to 125 °C range — so for avionics or downhole tools, check the MAT04BY or MAT02BH for extended temperature coverage. Maximum power dissipation is 350 mW. The bulk shipping format means the parts arrive in tubes or trays, not tape-and-reel — plan for manual or tube-fed insertion.
Low leakage and matching — the so-what
Collector cutoff current is a maximum 5 nA at rated Vcb — this low leakage floor is what lets the MAT04AY hold a current mirror ratio stable over temperature. In a log-amp or temperature-compensated bias circuit, that 5 nA ceiling directly sets the lower bound of the dynamic range. The 300 MHz fT means the transistor gain holds up well into the low-VHF region, so the array can serve as the active element in an IF amplifier or a fast comparator input stage without significant gain roll-off.