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Analog Devices DS1245Y-70IND+ — DC-DC Power Modules

DS1245Y-70IND+ NVSRAM, 1Mbit, 70 ns, Parallel, 32-EDIP

MPNDS1245Y-70IND+
End of Life

Analog Devices DS1245Y-70IND+ NVSRAM, 1Mbit (128K x 8), 70 ns access time, parallel interface, -40°C to 85°C, 32-EDIP, Tube.

$39.4Ref. price · indicative, final on quote
Packaging32-DIP Module (0.600", 15.24mm)
StockContact for availability
MOQ1 pcs
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Specifications

DS1245Y-70IND+ Technical Specifications
ParameterValue
Memory typeNon-Volatile
Mounting typeThrough Hole
Voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTube
TechnologyNVSRAM (Non-Volatile SRAM)
Access time70 ns
Memory size1Mbit
Memory formatNVSRAM
Case32-DIP Module (0.600\", 15.24mm)
Memory organization128K x 8
Write cycle time - word, page70ns

Product details

70 ns access time — what it means for the bus

The DS1245Y-70IND+ is a 1Mbit non-volatile SRAM from Analog Devices, organized as 128K x 8 bits with a parallel interface. Its 70 ns access time is the cycle-limiting spec for read and write operations: a 70 ns window means the memory can complete a data transfer within that period, which sets the bus timing margin for the host controller. For a microcontroller with a 12.5 MHz or slower external bus, this part fits without wait states; faster controllers may need to insert one or more wait cycles to meet the 70 ns requirement.

NVSRAM: SRAM speed with non-volatile retention

NVSRAM technology combines the fast read/write of a standard SRAM with an internal lithium battery and shadow EEPROM array. On power loss, the SRAM content is automatically copied to the EEPROM; on power-up, it is restored. This gives unlimited write endurance during normal operation (no wear-leveling needed) and data retention for years without power. The 70 ns write cycle time matches the read access time, so back-to-back writes run at full bus speed — unlike serial EEPROM or Flash, which have much longer write cycles.

Industrial temperature grade and package

Rated for -40°C to 85°C ambient, the DS1245Y-70IND+ is suited for industrial control, outdoor telecom, and automotive cabin applications where temperature extremes occur. The 32-pin EDIP (0.600" body, 15.24 mm pitch) is a through-hole module that includes the battery and controller in one sealed package. The 'IND' suffix in the ordering code designates the industrial temperature range; the '+' indicates RoHS3 compliance.

Lifecycle and supply posture

It is RoHS3 compliant. For BOM planning, this part can be specified into new designs without last-time-buy risk.

Frequently asked questions

What is the access time of DS1245Y-70IND+?

The access time is 70 ns for both read and write cycles.

Is DS1245Y-70IND+ RoHS compliant?

Yes, it is RoHS3 compliant.

Can I replace DS1245Y-70IND+ with DS1245Y-70?

The DS1245Y-70 is the commercial temperature (0°C to 70°C) version of the same NVSRAM. The DS1245Y-70IND+ is the industrial temperature (-40°C to 85°C) variant. They are pin-compatible and functionally identical, but the temperature grade differs — the DS1245Y-70 is not rated for the extended temperature range.

What is the difference between NVSRAM and SRAM?

NVSRAM behaves like standard SRAM during read/write operations (same speed, same interface) but includes a built-in battery and backup EEPROM that retain data when power is removed. Standard SRAM loses all data on power loss. NVSRAM eliminates the need for external battery-backed SRAM or serial EEPROM with wear-leveling concerns.