What the DS1230AB-120+ is and where it fits
The DS1230AB-120+ from Maxim Integrated is a 256Kbit non-volatile SRAM (NVSRAM) organized as 32K x 8 bits. It combines the fast read/write speed of a standard SRAM with an internal lithium battery that preserves data when system power drops, so no EEPROM write-cycle limits or Flash wear-leveling overhead. The 120 ns access time matches the bus timing of many 8-bit microcontrollers and legacy CPLD/FPGA designs — no wait states needed if the host cycle time stays above 120 ns. Typical applications include configuration storage, calibration constants, and data logging in embedded systems where power loss must not corrupt the last write.
120 ns access time — bus timing fit
The 120 ns access time sets the window for the host to read or write a byte. If your processor's memory cycle is 120 ns or slower, this part runs without wait states.
Package and mounting — through-hole EDIP
The DS1230AB-120+ comes in a 28-pin EDIP (0.600" row spacing, 15.24 mm) — a through-hole package that mates with standard 0.600" DIP sockets or solders directly into plated through-holes. The supplier device package is 28-EDIP. Mounting type is through-hole. For a socketed design, use a low-profile 28-pin DIP socket rated for the EDIP body width.
Lifecycle and compliance
ROHS3 compliant. If you need a pin-compatible alternative within the same family, verify the exact spec difference from the respective datasheets before substituting.