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Analog Devices DS1225AD-85+ — DC-DC Power Modules
Analog Devices

Analog Devices DS1225AD-85+ NVSRAM, 64Kbit, 85 ns, 28-EDIP

MPNDS1225AD-85+
End of Life

Analog Devices DS1225AD-85+ NVSRAM, 64Kbit (8K x 8), 85 ns access time, parallel interface, 4.5V-5.5V supply, 0°C to 70°C, 28-pin EDIP (600-mil) through-hole, ROHS3 compliant.

$22.12Ref. price · indicative, final on quote
Packaging28-DIP Module (0.600", 15.24mm)
StockContact for availability
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DS1225AD-85+ Technical Specifications
ParameterValue
Memory typeNon-Volatile
Mounting typeThrough Hole
Voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTube
TechnologyNVSRAM (Non-Volatile SRAM)
Access time85 ns
Memory size64Kbit
Memory formatNVSRAM
Case28-DIP Module (0.600\", 15.24mm)
Memory organization8K x 8
Write cycle time - word, page85ns

Product details

NVSRAM technology — SRAM speed with battery-backed retention

The DS1225AD-85+: This is a Non-Volatile SRAM (NVSRAM) — it combines the fast read/write cycle of a standard SRAM (85 ns access time, 85 ns write cycle) with an integrated lithium energy cell that retains the memory contents when the main supply is removed. No external battery, no EEPROM write-cycle wear, and no data-loss during power transitions. The memory is organized as 8K x 8 bits (64Kbit total) with a parallel interface.

28-pin EDIP footprint — legacy through-hole, direct socket replacement

Housed in a 28-pin EDIP (600-mil wide, 0.100-inch pitch) through-hole module. The EDIP is the standard footprint for this class of NVSRAM — it drops into existing sockets on boards designed for the Dallas Semiconductor/Maxim DS1225 series. The supplier device package (28-EDIP) matches the industry-standard pinout for 8K x 8 NVSRAMs. Shipping in Tube packaging — typical for through-hole DIP modules. No tape-and-reel option; this is a manual-insertion part for through-hole assembly lines or rework benches.

ROHS3 compliant (2015/863/EU) — no lead, mercury, cadmium, or restricted phthalates. No RoHS exemption is required for this part, so it ships freely into EU-regulated markets without documentation overhead. Availability and current pricing confirmed at RFQ time.

Frequently asked questions

What is the 85 ns access time and why does it matter for my system bus?

The 85 ns access time is the maximum time the memory takes to present valid data after the address is latched. For a system with a 10 MHz bus clock (100 ns cycle), this leaves only 15 ns of timing margin after the access completes — tight but workable if the bus controller has zero-wait-state capability. A faster part (70 ns or 55 ns) would add margin, but the 85 ns variant is the standard speed grade for most legacy 8-bit microcontroller interfaces.

Does this NVSRAM require an external battery or supercapacitor?

No. The DS1225AD-85+ integrates a lithium energy cell inside the EDIP module. The memory retains data for years without external power — no coin cell, no supercapacitor, and no battery holder on the PCB. This is the defining advantage over battery-backed SRAM modules.