Automotive-grade isolated gate driver with 5000Vrms isolation
The ADUM4224WARWZ: It delivers 4A peak output current per channel with 5000Vrms isolation, making it suitable for driving IGBTs and SiC MOSFETs in traction inverters, DC-DC converters, and on-board chargers where reinforced insulation is required. The 25kV/µs common-mode transient immunity (CMTI) ensures reliable switching in noisy inverter environments, and the 54ns max propagation delay keeps timing margins tight for high-frequency PWM schemes.
The 4A peak output current directly drives the gate charge of large IGBT modules or SiC MOSFETs without an external booster stage, simplifying the BOM and saving board area. The 25kV/µs CMTI rating means the output stays clean during fast common-mode voltage transients — critical in half-bridge topologies where the high-side driver sees rapid voltage swings. Propagation delay is matched at 54ns max for both channels, so inter-channel skew is negligible for dead-time management.
The output supply range of 4.5V to 18V covers standard gate drive voltages for IGBTs (typically 15V) and SiC MOSFETs (18V to 20V). The 12ns typical rise/fall time keeps switching losses low at frequencies up to several hundred kilohertz.
Housed in a 16-SOIC wide-body package (0.295" body width, 7.50mm), the ADUM4224WARWZ provides 8mm creepage distance for reinforced isolation. Surface-mount assembly with standard SOIC-16 footprint; no exposed pad, so thermal management relies on the package's own dissipation. The wide-body SOIC is preferred for high-voltage isolation applications where clearance and creepage are design constraints.
The Automotive grade (AEC-Q100) qualification is verified, supporting PPAP submissions for tier-one ECU programs.