Isolated gate driver with 4A peak for SiC and IGBT switching
The ADUM4135BRWZ: It delivers 4A peak output current with 16ns typical rise and fall times, making it suited for directly driving the gate capacitance of SiC MOSFETs and IGBT modules in hard-switched topologies. Propagation delay is 66ns max, symmetrical on both edges, which simplifies dead-time calculation. The output supply range of 12V to 30V matches standard gate-drive bias rails — 15V for IGBTs, 18V to 20V for SiC — without needing an extra regulator.
The 4A peak output is the number that decides whether this driver can charge the gate of a 60A SiC MOSFET or a 300A IGBT module fast enough to stay out of the linear region. The symmetrical 66ns tpLH/tpHL means you don't need to pad the dead-time for one edge being slower, which recovers a few hundred nanoseconds of duty-cycle headroom. The 100kV/µs CMTI is the spec that keeps the gate drive from glitching when the high-side switch node slews through the Miller plateau — if the CMTI is marginal, the output can latch or produce a narrow pulse that saturates the transformer. At 100kV/µs minimum, this part clears the requirement for most SiC and GaN half-bridge layouts with a healthy margin.
Package and mounting — 16-SOIC wide-body
The ADUM4135BRWZ comes in a 16-SOIC wide-body package (0.295-inch body width, 7.50mm), surface-mount. The wide-body SOIC provides the creepage distance needed to sustain the 5000Vrms isolation rating across the package — standard narrow SOIC-16 would not meet that clearance. The tube shipment variant (ADUM4135BRWZ) is the one to order for prototype and low-volume builds; the tape-and-reel variant ADUM4135BRWZ-RL is the production-volume option. Both are electrically identical.