Skip to main content
Alpha & Omega Semiconductor Inc. AOTF12N30 — Discrete Semiconductors

Alpha & Omega Semiconductor Inc. AOTF12N30

MPNAOTF12N30
Active
$0.4745Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AOTF12N30 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11.5A (Tc)
Power dissipation36W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs420mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds790 pF @ 25 V